APTGT75SK170D1G aptgt75sk170t1g ? rev 2 december, 2009 www.microsemi.com 1 ? 4 2 1 5 q1 3 4 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 130 i c continuous collector current t c = 80c 75 i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 465 w rbsoa reverse bias safe operating area t j = 125c 150a @ 1600v these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com application ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m5 power connectors benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? rohs compliant buck chopper trench + field stop igbt power module v ces = 1700v i c = 75a @ tc = 80c
APTGT75SK170D1G aptgt75sk170t1g ? rev 2 december, 2009 www.microsemi.com 2 ? 4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 250 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 75a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 3ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 6800 c oes output capacitance 277 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 220 pf q g gate charge v ge =15v, i c =75a v ce =900v 0.85 c t d(on) turn-on delay time 280 t r rise time 80 t d(off) turn-off delay time 850 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 75a r g = 18 120 ns t d(on) turn-on delay time 300 t r rise time 100 t d(off) turn-off delay time 1000 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 75a r g = 18 200 ns e on turn-on switching energy t j = 125c 27 e off turn-off switching energy v ge = 15v v bus = 900v i c = 75a r g = 18 t j = 125c 24.5 mj i sc short circuit data v ge 15v ; v bus = 1000v t p 10s ; t j = 125c 300 a chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 250 i rm maximum reverse leakage current v r =1700v t j = 125c 500 a i f dc forward current tc = 80c 75 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 75a t j = 125c 1.9 v t j = 25c 410 t rr reverse recovery time t j = 125c 520 ns t j = 25c 19 q rr reverse recovery charge t j = 125c 31 c t j = 25c 9 e rr reverse recovery energy i f = 75a v r = 900v di/dt =800a/s t j = 125c 17.5 mj
APTGT75SK170D1G aptgt75sk170t1g ? rev 2 december, 2009 www.microsemi.com 3 ? 4 thermal and package characteristics symbol characteristic min typ max unit igbt 0.27 r thjc junction to case thermal resistance diode 0.5 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m5 2 3.5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 180 g d1 package outline (dimensions in mm) typical performance curve forward characteristic of diode t j =25c t j =125c 0 37.5 75 112.5 150 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 0 20406080100120 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =18 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode
APTGT75SK170D1G aptgt75sk170t1g ? rev 2 december, 2009 www.microsemi.com 4 ? 4 output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 37.5 75 112.5 150 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 37.5 75 112.5 150 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 20 40 60 80 0 37.5 75 112.5 150 i c (a) e (mj) v ce = 900v v ge = 15v r g = 18 ? t j = 125c eon eoff err 0 25 50 75 100 0 20406080100120140 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 75a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =18 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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